onsemi NXH100B120H3Q0PG IGBT Module 1200 V Case 180BF, Surface

Voir l’ensemble des IGBTs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
245-6962
Référence fabricant:
NXH100B120H3Q0PG
Fabricant:
onsemi
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Marque

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

186W

Number of Transistors

2

Package Type

Case 180BF

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

13.9mm

Length

55.2mm

Width

32.8 mm

Series

NXH100B120H3Q0PG

Automotive Standard

No

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs

Low Reverse Recovery and Fast Switching SiC Diodes

1600 V Bypass and Anti parallel Diodes

Low Inductive Layout

Solderable Pins or Press Fit Pins

Thermistor options with Pre applied thermal interface Material and without pre applied TIM

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