onsemi IGBT Module 1000 V Q2PACK, Surface
- N° de stock RS:
- 245-6973
- Référence fabricant:
- NXH350N100H4Q2F2P1G
- Fabricant:
- onsemi
Sous-total (1 plateau de 36 unités)*
5 585,148 €
(TVA exclue)
6 758,028 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 36 + | 155,143 € | 5 585,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 245-6973
- Référence fabricant:
- NXH350N100H4Q2F2P1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 592W | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | NXH350N100H4Q2F2P1G | |
| Height | 12.3mm | |
| Standards/Approvals | RoHS | |
| Width | 47.3 mm | |
| Length | 93.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 592W | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series NXH350N100H4Q2F2P1G | ||
Height 12.3mm | ||
Standards/Approvals RoHS | ||
Width 47.3 mm | ||
Length 93.1mm | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins
The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free and are RoHS Compliant
Liens connexes
- onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)
- onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)
- onsemi NXH400N100H4Q2F2PG IGBT Module PIM42
- onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- onsemi NXH400N100H4Q2F2SG IGBT Module PIM44
- onsemi NXH80T120L3Q0S3G IGBT Module, 75 A 1200 V Q0PACK - Case 180AB (Pb-Free and Halide-Free)
- onsemi NXH450B100H4Q2F2SG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BR (Pb-Free and Halide-Free Solder Pins)
