onsemi NXH350N100H4Q2F2S1G IGBT Module 1000 V Q2PACK, Surface
- N° de stock RS:
- 245-6976
- Référence fabricant:
- NXH350N100H4Q2F2S1G
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 245-6976
- Référence fabricant:
- NXH350N100H4Q2F2S1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 592W | |
| Package Type | Q2PACK | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 93.1mm | |
| Width | 47.3 mm | |
| Series | NXH350N100H4Q2F2S1G | |
| Height | 12.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 592W | ||
Package Type Q2PACK | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 93.1mm | ||
Width 47.3 mm | ||
Series NXH350N100H4Q2F2S1G | ||
Height 12.3mm | ||
Automotive Standard No | ||
Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins
The ON Semiconductor Three Level NPC Q2 pack module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.
Extremely efficient trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
Low package height
These devices are Pb free, Halogen Free,BFR Free and are RoHS Compliant
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