onsemi IGBT Module 1000 V Q2BOOST-PIM53, Surface
- N° de stock RS:
- 245-6968
- Référence fabricant:
- NXH300B100H4Q2F2PG
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 245-6968
- Référence fabricant:
- NXH300B100H4Q2F2PG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Maximum Power Dissipation Pd | 79W | |
| Number of Transistors | 6 | |
| Package Type | Q2BOOST-PIM53 | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 17.7mm | |
| Length | 93.1mm | |
| Series | NXH300B100H4Q2F2PG | |
| Width | 47.3 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Maximum Power Dissipation Pd 79W | ||
Number of Transistors 6 | ||
Package Type Q2BOOST-PIM53 | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 17.7mm | ||
Length 93.1mm | ||
Series NXH300B100H4Q2F2PG | ||
Width 47.3 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.
Extremely Efficient Trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free device
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