Name: Infineon FS950R08A6P2BBPSA1 IGBT Module 750 V HybridPACK
Brand: Infineon
SKU: 244-5879
Price: 385.13 EUR
Availability: InStock

Unité

sélectionner ou taper la quantité

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	750V
	Maximum Power Dissipation Pd	870W
	Number of Transistors	6
	Package Type	HybridPACK
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.35V
	Maximum Operating Temperature	150°C
	Series	FS950R08A6P2BBPSA1
	Standards/Approvals	RoHS, IEC24720 and IEC16022
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 750V
	Maximum Power Dissipation Pd 870W
	Number of Transistors 6
	Package Type HybridPACK
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.35V
	Maximum Operating Temperature 150°C
	Series FS950R08A6P2BBPSA1
	Standards/Approvals RoHS, IEC24720 and IEC16022
	Automotive Standard No

The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.

Electrical Features

Blocking voltage 750 V

Low VCEsat

Low switching losses

Low Qg and crss

Low inductive design Tvj op = 150° C

Short-time extended operation temperature Tvj op = 175°C

Mechanical features

4.2kV DC 1sec insulation

High creepage and clearance distances

Compact design

High power density

Direct cooled pinFin base plate

Guiding elements for PCB and cooler assembly

Integrated NTC temperature sensor

Pressfit contact technology

RoHS compliant

UL 94 V0 module frame

Unité	Prix par unité
1 - 1	318,29 €
2 +	310,34 €

Infineon FS950R08A6P2BBPSA1 IGBT Module 750 V HybridPACK

Frais de livraison offerts pour toute commande de plus de 80,00 €

Liens connexes