Infineon IGBT Module 750 V HybridPACK

Voir l’ensemble des IGBTs

Sous-total (1 plateau de 6 unités)*

2 943,912 €

(TVA exclue)

3 562,134 €

(TVA incluse)

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  • Expédition à partir du 05 octobre 2026
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Unité
Prix par unité
le plateau*
6 +490,652 €2 943,91 €

*Prix donné à titre indicatif

N° de stock RS:
244-5877
Référence fabricant:
FS950R08A6P2BBPSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

750V

Number of Transistors

6

Maximum Power Dissipation Pd

870W

Package Type

HybridPACK

Maximum Collector Emitter Saturation Voltage VceSAT

1.35V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC24720 and IEC16022

Series

FS950R08A6P2BBPSA1

Automotive Standard

No

The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.

Electrical Features

Blocking voltage 750 V

Low VCEsat

Low switching losses

Low Qg and crss

Low inductive design Tvj op = 150° C

Short-time extended operation temperature Tvj op = 175°C

Mechanical features

4.2kV DC 1sec insulation

High creepage and clearance distances

Compact design

High power density

Direct cooled pinFin base plate

Guiding elements for PCB and cooler assembly

Integrated NTC temperature sensor

Pressfit contact technology

RoHS compliant

UL 94 V0 module frame

Liens connexes