Infineon IGBT Module 750 V HybridPACK
- N° de stock RS:
- 244-5877
- Référence fabricant:
- FS950R08A6P2BBPSA1
- Fabricant:
- Infineon
Sous-total (1 plateau de 6 unités)*
1 828,80 €
(TVA exclue)
2 212,86 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 6 + | 304,80 € | 1 828,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-5877
- Référence fabricant:
- FS950R08A6P2BBPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Maximum Power Dissipation Pd | 870W | |
| Number of Transistors | 6 | |
| Package Type | HybridPACK | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | FS950R08A6P2BBPSA1 | |
| Standards/Approvals | RoHS, IEC24720 and IEC16022 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Maximum Power Dissipation Pd 870W | ||
Number of Transistors 6 | ||
Package Type HybridPACK | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series FS950R08A6P2BBPSA1 | ||
Standards/Approvals RoHS, IEC24720 and IEC16022 | ||
Automotive Standard No | ||
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
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