Infineon IGU04N60TAKMA1, Type N-Channel IGBT, 4 A 600 V TO-251

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Temporairement en rupture de stock
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N° de stock RS:
244-0897
Référence fabricant:
IGU04N60TAKMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

4A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

42W

Package Type

TO-251

Channel Type

Type N

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

TRENCHSTOPTM

Standards/Approvals

JEDEC1

Automotive Standard

No

Infineon IGBT, 4A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IGU04N60TAKMA1


This IGBT is a highly efficient transistor designed for use in demanding applications. With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 4A, this TO-251 IGBT module excels in performance. The compact dimensions of 6.6 x 6.1 x 0.09 mm make it suitable for a variety of setups while operating effectively within a temperature range from -40°C to +175°C.

Features & Benefits


• Very low saturation voltage enhances energy efficiency

• Short-circuit withstand time of 5μs increases reliability

• High switching speed optimises system performance

• Low gate charge reduces driver power requirements

• Excellent thermal stability ensures consistent operation

• Tight parameter distribution enhances design flexibility

Applications


• Utilised in frequency inverters for efficient energy conversion

• Ideal for electric motor drives in industrial settings

• Effective in power supply where space is limited

• Suitable for renewable energy systems requiring high efficiency

• Designed for various automation demanding reliability

What are the key electrical characteristics of this IGBT?


This device features a maximum collector-emitter voltage of 600V and a continuous collector current of 4A, making it suitable for high power applications. Its maximum power dissipation is rated at 42W, allowing it to handle substantial load demands effectively.

How does the gate-emitter voltage range impact usability?


The gate-emitter voltage range of ±20V provides flexibility in driving configurations, allowing integration with a variety of control circuits while maintaining stable operation in diverse conditions.

What are the benefits of the thermal resistance specifications?


With a thermal resistance of 3.5 K/W between junction and case, this IGBT ensures efficient heat management, allowing prolonged operation at high temperatures without performance degradation, which is essential for high-power applications.

What makes this IGBT suitable for harsh environments?


The device operates between -40°C and +175°C, ensuring reliability in extreme temperatures, which is crucial for industrial applications exposed to varying environmental conditions.

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