Infineon, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- N° de stock RS:
- 170-2371
- Référence fabricant:
- IKP20N60TXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
19,59 €
(TVA exclue)
23,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 460 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 10 | 1,959 € | 19,59 € |
| 20 - 40 | 1,861 € | 18,61 € |
| 50 - 90 | 1,783 € | 17,83 € |
| 100 - 240 | 1,666 € | 16,66 € |
| 250 + | 1,568 € | 15,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 170-2371
- Référence fabricant:
- IKP20N60TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 41A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, JEDEC, RoHS | |
| Series | TrenchStop | |
| Energy Rating | 0.77mJ | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 41A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, JEDEC, RoHS | ||
Series TrenchStop | ||
Energy Rating 0.77mJ | ||
Automotive Standard No | ||
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses
Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits:
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability
Target Applications:
UPS
Solar Inverters
Major Home Appliances
Welding
Air conditioning
Industrial Drives
Other hard switching applications
Liens connexes
- Infineon IKP20N60TXKSA1 IGBT 3-Pin TO-220, Through Hole
- Infineon IKP06N60TXKSA1 IGBT 3-Pin TO-220, Through Hole
- Infineon IKP15N60TXKSA1 IGBT 3-Pin TO-220, Through Hole
- Infineon IRG4IBC20KDPBF IGBT 3-Pin TO-220, Through Hole
- Infineon IGBT 3-Pin PG-TO263-3, Through Hole
- Infineon IGP15N60TXKSA1 Single IGBT, 26 A 600 V TO-220-3
- Infineon IKB20N60TATMA1 IGBT 3-Pin PG-TO263-3, Through Hole
- onsemi FGP3040G2_F085 IGBT 3-Pin TO-220, Through Hole