Infineon IKQ75N120CS6XKSA1, Type N-Channel IGBT Single Transistor IC, 150 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 226-6111
- Numéro d'article Distrelec:
- 303-41-207
- Référence fabricant:
- IKQ75N120CS6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,86 €
(TVA exclue)
8,30 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 4 | 6,86 € |
| 5 - 9 | 6,18 € |
| 10 - 24 | 5,76 € |
| 25 - 49 | 5,41 € |
| 50 + | 5,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 226-6111
- Numéro d'article Distrelec:
- 303-41-207
- Référence fabricant:
- IKQ75N120CS6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 150A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 31ns | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 150A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 31ns | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon 5 A IGBT with anti-parallel diode is Very soft, fast recovery anti-parallel diode and has high ruggedness, temperature stable behaviour. It used low gate charge.
Low EMI
Low Gate Charge QG
Low saturation voltage if 1.85 V combined with low switching losses
Liens connexes
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