Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC, 20 A 1200 V, 3-Pin PG-TO-247

Offre groupée disponible
Consulter les options de prix de gros

Sous-total (1 tube de 240 unités)*

385,92 €

(TVA exclue)

467,04 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • 240 unité(s) expédiée(s) à partir du 14 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité
Prix par unité
le tube*
240 - 2401,608 €385,92 €
480 +1,527 €366,48 €

*Prix donné à titre indicatif

N° de stock RS:
244-2913
Référence fabricant:
IHW20N120R5XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

288W

Package Type

PG-TO-247

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.55V

Maximum Gate Emitter Voltage VGEO

±20 %

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

16.13mm

Standards/Approvals

IEC61249-2-21, RoHS

Series

Resonant Switching

Height

5.21mm

Length

42mm

Automotive Standard

No

Infineon Resonant Switching Series IGBT Single Transistor IC, 1200V Max Collector Emitter Voltage, 20A Max Continuous Collector Current - IHW20N120R5XKSA1


This IGBT single-transistor IC is a high-voltage switching device designed for power conversion and control in demanding electrical systems. It operates across a wide temperature span and is intended for applications requiring elevated voltage handling and substantial continuous current capacity. The component is supplied in a PG-TO-247 package and complies with specified material and hazardous-substance standards.

Features and Benefits:


• 1200 V collector-emitter withstand enables high-voltage switching
• 20 A continuous collector current supports sustained power delivery
• 1.55 V Vce(sat) reduces conduction losses during on-state operation
• 288 W maximum power dissipation allows heavy-load thermal margin
• ±20 V gate-emitter rating permits standard gate-drive amplitudes
• Operates from −40 °C to 175 °C for extended temperature resilience

Applications


• Suitable for resonant switching topologies in power converters
• Used for 1200 V 20 A IGBT transistor roles in industrial inverters
• Ideal for high-power IGBT 288 W modules in motor drives
• Can be used for PG-TO-247 IGBT module replacements in assemblies
• Appropriate for high-temperature IGBT −40 to 175 °C environments

What packaging is provided for straightforward board or heatsink mounting?


It is supplied in a PG-TO-247 package suitable for standard through-hole mounting and conventional heatsinking.

Which material and hazardous-substance standards does it meet?


The device is RoHS-compliant and meets IEC 61249-2-21 material specifications.

What electrical limit defines gate-drive safety?


The gate-emitter voltage is limited to ±20 V to prevent gate oxide stress.

How should designers assess thermal capacity for sustained operation?


Use the 288 W maximum power dissipation rating to size heatsinks and cooling for continuous loads.

What temperature extremes can the device tolerate in operation?


It functions from a minimum of −40 °C up to a maximum of 175 °C for elevated-temperature applications.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.