Infineon IHW15N120E1XKSA1, Type N-Channel IGBT Single Transistor IC, 30 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 226-6076
- Référence fabricant:
- IHW15N120E1XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
13,26 €
(TVA exclue)
16,045 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 135 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,652 € | 13,26 € |
| 25 - 45 | 2,306 € | 11,53 € |
| 50 - 120 | 2,148 € | 10,74 € |
| 125 - 245 | 2,016 € | 10,08 € |
| 250 + | 1,858 € | 9,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 226-6076
- Référence fabricant:
- IHW15N120E1XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 156W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Standards/Approvals | JEDEC for target applications | |
| Length | 42mm | |
| Series | Resonant Soft-Switching | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 156W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Standards/Approvals JEDEC for target applications | ||
Length 42mm | ||
Series Resonant Soft-Switching | ||
Automotive Standard No | ||
The Infineon IHW15N120E1 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.
Very tight parameter distribution
Low EMI
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