Références fabricant

Infineon FF600R12KE4BOSA1, N-Channel IGBT, 600 A 1200 V, 7-Pin AG-62MM, Surface

N° de stock RS:: 222-4793
Référence fabricant:: FF600R12KE4BOSA1
Fabricant:: Infineon

Infineon FF600R12KE4BOSA1, N-Channel IGBT, 600 A 1200 V, 7-Pin AG-62MM, Surface

Sous-total (1 plateau de 10 unités)*

1 625,71 €

(TVA exclue)

1 967,11 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 28 décembre 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le plateau*
10 +	162,571 €	1 625,71 €

*Prix donné à titre indicatif

N° de stock RS:: 222-4793
Référence fabricant:: FF600R12KE4BOSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Maximum Continuous Collector Current Ic	600A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	2
	Package Type	AG-62MM
	Mount Type	Surface
	Channel Type	N
	Pin Count	7
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	FF600R12KE4
	Width	61.4mm
	Height	30.9mm
	Length	106.4mm
	Standards/Approvals	UL Approved (E83335)
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Maximum Continuous Collector Current Ic 600A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 2
	Package Type AG-62MM
	Mount Type Surface
	Channel Type N
	Pin Count 7
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series FF600R12KE4
	Width 61.4mm
	Height 30.9mm
	Length 106.4mm
	Standards/Approvals UL Approved (E83335)
	Automotive Standard No

Datasheet - FF600R12KE4BOSA1

Infineon FF600R12KE4 Series IGBT, 1200V Maximum Collector-Emitter Voltage, 600A Max Continuous Collector Current - FF600R12KE4BOSA1

This IGBT is a surface-mounted power semiconductor designed for high-voltage switching in industrial power systems. It pairs dual transistors within a single 7‑pin package to handle heavy DC currents while operating across a wide temperature range, making it suitable for demanding electrical control and conversion tasks.

Features and Benefits:

• 1200 V collector-emitter rating enables high-voltage switching capability
• 600 A continuous collector current supports heavy current loads
• 2.2 V VCE(sat) minimises conduction losses at high currents
• 20 V gate-emitter tolerance allows robust gate‑drive margins
• UL E83335 approval confirms recognised safety assessment
• Operates between −40 °C and 150 °C for extended thermal range

Applications

• Suitable for industrial power converters handling high voltages
• Used for traction inverters requiring high continuous current
• Ideal for high-current motor drive assemblies
• Can be used for renewable-energy inverter stacks
• Suitable for power supplies in heavy‑duty automation systems

What package format does the device use for mounting?

It is supplied in an AG‑62MM surface‑mount package.

How many transistor elements are contained within the module?

The module contains two transistors in a dual configuration.

What pin count should designers accommodate on the PCB?

Designers should allow for a seven‑pin footprint.

What are the external size considerations for enclosure design?

The component dimensions are 61.4 mm width by 106.4 mm length by 30.9 mm height.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.