Infineon, Type N-Channel IGBT Module, 580 A 1200 V AG-62MM-1, Clamp

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Sous-total (1 plateau de 10 unités)*

1 399,08 €

(TVA exclue)

1 692,89 €

(TVA incluse)

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  • Expédition à partir du 15 février 2028
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Unité
Prix par unité
le plateau*
10 +139,908 €1 399,08 €

*Prix donné à titre indicatif

N° de stock RS:
166-0902
Référence fabricant:
FF400R12KE3HOSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

580A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

2000W

Package Type

AG-62MM-1

Mount Type

Clamp

Channel Type

Type N

Switching Speed

0.04μs

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

125°C

Height

30.9mm

Length

106.4mm

Series

62_MMC

Standards/Approvals

RoHS

Width

61.4 mm

Automotive Standard

No

Pays d'origine :
HU

Infineon IGBT Module, 580A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF400R12KE3HOSA1


This IGBT module is engineered to enhance performance in various industrial applications. With dimensions of 106.4 x 61.4 x 30.9 mm, it combines high efficiency with robust specifications, offering a maximum continuous collector current of 580A and a collector-emitter voltage rating of 1200V. Its design allows for effective integration into power electronic circuits, making it an Ideal choice for those requiring reliable modular IGBT solutions.

Features & Benefits


• Maximum gate-emitter voltage of ±20V provides operational flexibility

• High power dissipation capability of 2kW supports demanding requirements

• Designed for panel mounting, ensuring easy installation in various environments

• Series configuration optimises space and operational efficiency

Applications


• Utilised in inverter circuits for industrial machinery

• Optimised for renewable energy systems, such as solar inverters

• Effective in electric vehicles and propulsion systems

• Used in heavy-duty automation equipment where high current is VITAL

What are the thermal resistance specifications for this module?


The thermal resistance from junction to case is 0.062 K/W, and from case to heatsink is 0.031 K/W, ensuring effective heat dissipation during operation.

How does this IGBT module perform under varying temperatures?


With a maximum operating temperature of +125°C and a minimum of -40°C, it is suitable for diverse environmental conditions and demanding applications.

What are the implications of the high collector current rating?


A maximum continuous collector current rating of 580A means this IGBT module can handle significant power loads, making it Ideal for high current IGBT applications in industrial settings.

Can this module handle fast switching operations effectively?


Yes, the low gate capacitance of 28nF and specified gate drive capabilities enable efficient fast switching, increasing the performance of power electronic components in circuits.

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