Infineon, Type N-Channel IGBT Module, 580 A 1200 V AG-62MM-1, Clamp
- N° de stock RS:
- 166-0902
- Référence fabricant:
- FF400R12KE3HOSA1
- Fabricant:
- Infineon
Sous-total (1 plateau de 10 unités)*
1 662,12 €
(TVA exclue)
2 011,17 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 19 juin 2028
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 10 + | 166,212 € | 1 662,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-0902
- Référence fabricant:
- FF400R12KE3HOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 580A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 2000W | |
| Package Type | AG-62MM-1 | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Switching Speed | 0.04μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 30.9mm | |
| Standards/Approvals | RoHS | |
| Series | 62_MMC | |
| Length | 106.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 580A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 2000W | ||
Package Type AG-62MM-1 | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Switching Speed 0.04μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 30.9mm | ||
Standards/Approvals RoHS | ||
Series 62_MMC | ||
Length 106.4mm | ||
Automotive Standard No | ||
- Pays d'origine :
- HU
Infineon IGBT Module, 580A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF400R12KE3HOSA1
This IGBT module is engineered to enhance performance in various industrial applications. With dimensions of 106.4 x 61.4 x 30.9 mm, it combines high efficiency with robust specifications, offering a maximum continuous collector current of 580A and a collector-emitter voltage rating of 1200V. Its design allows for effective integration into power electronic circuits, making it an Ideal choice for those requiring reliable modular IGBT solutions.
Features & Benefits
• Maximum gate-emitter voltage of ±20V provides operational flexibility
• High power dissipation capability of 2kW supports demanding requirements
• Designed for panel mounting, ensuring easy installation in various environments
• Series configuration optimises space and operational efficiency
Applications
• Utilised in inverter circuits for industrial machinery
• Optimised for renewable energy systems, such as solar inverters
• Effective in electric vehicles and propulsion systems
• Used in heavy-duty automation equipment where high current is VITAL
What are the thermal resistance specifications for this module?
The thermal resistance from junction to case is 0.062 K/W, and from case to heatsink is 0.031 K/W, ensuring effective heat dissipation during operation.
How does this IGBT module perform under varying temperatures?
With a maximum operating temperature of +125°C and a minimum of -40°C, it is suitable for diverse environmental conditions and demanding applications.
What are the implications of the high collector current rating?
A maximum continuous collector current rating of 580A means this IGBT module can handle significant power loads, making it Ideal for high current IGBT applications in industrial settings.
Can this module handle fast switching operations effectively?
Yes, the low gate capacitance of 28nF and specified gate drive capabilities enable efficient fast switching, increasing the performance of power electronic components in circuits.
Liens connexes
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