onsemi AFGHL75T65SQ, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 214-8782
- Référence fabricant:
- AFGHL75T65SQ
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
27,19 €
(TVA exclue)
32,90 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 5,438 € | 27,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-8782
- Référence fabricant:
- AFGHL75T65SQ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor AFGHL series is IGBT which offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification.
High current capability
Fast switching
Tight parameter distribution