onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

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Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
181-1866
Référence fabricant:
FGH75T65SHDTL4
Fabricant:
onsemi
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Marque

onsemi

Maximum Continuous Collector Current Ic

75A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

455W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type P

Pin Count

4

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Field Stop 3rd generation

Energy Rating

160mJ

Automotive Standard

No

Pays d'origine :
CN
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A

100% of the Parts Tested for ILM(1)

High Input Impedance

Fast Switching

Tighten Parameter Distribution

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