STMicroelectronics STGWA20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 206-7209
- Référence fabricant:
- STGWA20H65DFB2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
54,36 €
(TVA exclue)
65,79 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 30 unité(s) expédiée(s) à partir du 04 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 1,812 € | 54,36 € |
| 120 - 240 | 1,69 € | 50,70 € |
| 270 - 480 | 1,647 € | 49,41 € |
| 510 - 990 | 1,604 € | 48,12 € |
| 1020 + | 1,564 € | 46,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 206-7209
- Référence fabricant:
- STGWA20H65DFB2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 147W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench Gate Field Stop | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 147W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench Gate Field Stop | ||
Automotive Standard No | ||
The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Liens connexes
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