STMicroelectronics, Type N-Channel IGBT, 145 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 206-7206
- Référence fabricant:
- STGWA100H65DFB2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
124,02 €
(TVA exclue)
150,06 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 90 | 4,134 € | 124,02 € |
| 120 - 240 | 4,082 € | 122,46 € |
| 270 - 480 | 4,033 € | 120,99 € |
| 510 - 990 | 3,984 € | 119,52 € |
| 1020 + | 3,937 € | 118,11 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 206-7206
- Référence fabricant:
- STGWA100H65DFB2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 145A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 441W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 145A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 441W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series STG | ||
Length 15.9mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 100 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Liens connexes
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