Starpower GD50FSX65L2S, N-Channel IGBT Module, 50 A 650 V Module
- N° de stock RS:
- 427-814
- Référence fabricant:
- GD50FSX65L2S
- Fabricant:
- Starpower
Offre groupée disponible
Sous-total (1 unité)*
35,24 €
(TVA exclue)
42,64 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 35,24 € |
| 10 - 99 | 31,72 € |
| 100 + | 29,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 427-814
- Référence fabricant:
- GD50FSX65L2S
- Fabricant:
- Starpower
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Starpower | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 258W | |
| Number of Transistors | 6 | |
| Package Type | Module | |
| Channel Type | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Starpower | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 258W | ||
Number of Transistors 6 | ||
Package Type Module | ||
Channel Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Starpower IGBT Power Module provides ultralow conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175°C
Low inductance case
Fast and soft reverse recovery anti parallel FWD
Isolated copper baseplate using DBC technology
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