STMicroelectronics STGWT20H65FB, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole

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Options de conditionnement :
N° de stock RS:
192-4809
Référence fabricant:
STGWT20H65FB
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

Trench Gate Field Stop IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

168W

Package Type

TO

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Automotive Standard

No

Pays d'origine :
KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C

High speed switching series

Minimized tail current

VCE(sat)= 1.55 V (typ.) @ IC= 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Lead free package

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