STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole
- N° de stock RS:
- 192-4655
- Référence fabricant:
- STGWT20H65FB
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 192-4655
- Référence fabricant:
- STGWT20H65FB
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | Trench Gate Field Stop IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 168W | |
| Package Type | TO | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Series | HB | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type Trench Gate Field Stop IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 168W | ||
Package Type TO | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Series HB | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature: TJ= 175 °C
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package
Liens connexes
- STMicroelectronics STGWT20H65FB 40 A 650 V Through Hole
- STMicroelectronics 10 A 600 V Surface
- STMicroelectronics STGD5H60DF 10 A 600 V Surface
- STMicroelectronics 60 A 600 V Through Hole
- STMicroelectronics 30 A 600 V Through Hole
- STMicroelectronics STGW30H60DFB 30 A 600 V Through Hole
- STMicroelectronics STGFW30V60DF 60 A 600 V Through Hole
- ROHM RGS40NL65HRBTL 20 A 650 V Surface