onsemi, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole

Voir l’ensemble des IGBTs
Pénurie d'approvisionnement
En raison d'une pénurie d'approvisionnement mondial, nous ne savons pas quand ce produit sera à nouveau en stock.
N° de stock RS:
181-1864
Référence fabricant:
FGH75T65SQDNL4
Fabricant:
onsemi
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Marque

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

75A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

375W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type P

Pin Count

4

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.43V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free, Halide Free

Series

Field Stop IV

Energy Rating

160mJ

Automotive Standard

No

Pays d'origine :
CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology

TJmax = 175°C

Improved Gate Control Lowers Switching Losses

Separate Emitter Drive Pin

TO-247-4L for Minimal Eon Losses

Optimized for High Speed Switching

These are Pb-Free Devices

Solar Inverter

Uninterruptible Power Inverter Supplies

Neutral Point Clamp Topology

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