Vishay SUM70060E-GE3, Type N-Channel IGBT, 3-Pin TO-263, Surface
- N° de stock RS:
- 180-8025
- Référence fabricant:
- SUM70060E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
12,85 €
(TVA exclue)
15,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 5 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,57 € | 12,85 € |
| 50 - 120 | 2,314 € | 11,57 € |
| 125 - 245 | 2,056 € | 10,28 € |
| 250 - 495 | 1,88 € | 9,40 € |
| 500 + | 1,67 € | 8,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8025
- Référence fabricant:
- SUM70060E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.875mm | |
| Series | ThunderFET | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 125mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.875mm | ||
Series ThunderFET | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 125mJ | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Applications
• AC/DC switch-mode power supplies
• Battery management
• DC/AC inverters
• DC/DC converters
• Lighting
• Motor drive switches
• Synchronous rectifier
• Uninterruptible power supplies
Liens connexes
- Vishay 3-Pin TO-263, Surface
- Vishay SIHG47N60EF-GE3 3-Pin TO-247AC
- Vishay SUD08P06-155L-GE3 3-Pin TO-252, Surface
- Vishay 3-Pin TO-247AC
- Vishay Type N-Channel MOSFET 600 V TO-263 SIHB15N60E-GE3
- Vishay Type N-Channel MOSFET 650 V TO-263 SIHB24N65E-GE3
- Vishay 3-Pin TO-252, Surface
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-263 SUM70042E-GE3