Vishay, Type N-Channel IGBT, 3-Pin TO-263, Surface

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Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
180-7419
Référence fabricant:
SUM70060E-GE3
Fabricant:
Vishay
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Marque

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

375W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

15.875mm

Standards/Approvals

RoHS

Series

ThunderFET

Automotive Standard

No

Energy Rating

125mJ

Pays d'origine :
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• AC/DC switch-mode power supplies

• Battery management

• DC/AC inverters

• DC/DC converters

• Lighting

• Motor drive switches

• Synchronous rectifier

• Uninterruptible power supplies

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