Infineon FP35R12W2T4B11BOMA1 3 Phase Bridge IGBT Module, 54 A 1200 V, 35-Pin EASY2B, PCB Mount

Voir l’ensemble des IGBTs
Offre groupée disponible

Sous-total (1 boîte de 15 unités)*

849,495 €

(TVA exclue)

1 027,89 €

(TVA incluse)

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Temporairement en rupture de stock
  • 15 unité(s) expédiée(s) à partir du 12 novembre 2026
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Unité
Prix par unité
La Boite*
15 - 1556,633 €849,50 €
30 +53,802 €807,03 €

*Prix donné à titre indicatif

N° de stock RS:
168-8771
Référence fabricant:
FP35R12W2T4B11BOMA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

54 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

215 W

Configuration

3 Phase Bridge

Package Type

EASY2B

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Switching Speed

1MHz

Transistor Configuration

3 Phase

Dimensions

56.7 x 48 x 12mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Pays d'origine :
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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