Infineon FP35R12W2T4B11BOMA1, Type N-Channel IGBT Module, 54 A 1200 V, 35-Pin EASY2B, Clamp
- N° de stock RS:
- 168-8771
- Référence fabricant:
- FP35R12W2T4B11BOMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 boîte de 15 unités)*
599,94 €
(TVA exclue)
725,925 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 15 unité(s) expédiée(s) à partir du 12 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | La Boite* |
|---|---|---|
| 15 - 15 | 39,996 € | 599,94 € |
| 30 + | 37,996 € | 569,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-8771
- Référence fabricant:
- FP35R12W2T4B11BOMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 54A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 215W | |
| Package Type | EASY2B | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 35 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 48mm | |
| Height | 12mm | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 54A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 215W | ||
Package Type EASY2B | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 35 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 48mm | ||
Height 12mm | ||
Length 56.7mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- Infineon 54 A 1200 V Clamp
- Infineon 35 A 1200 V EASY2B, Clamp
- Infineon 54 A 1200 V AG-EASY2B-1, Clamp
- Infineon FP35R12W2T4PB11BPSA1 35 A 1200 V EASY2B, Clamp
- Infineon FP35R12W2T4BOMA1 54 A 1200 V AG-EASY2B-1, Clamp
- Infineon 75 A 1200 V EASY2B, Clamp
- Infineon 25 A 1200 V EASY2B, Clamp
- Infineon 50 A 1200 V EASY2B, Clamp