Infineon FP35R12W2T4B11BOMA1 3 Phase Bridge IGBT Module, 54 A 1200 V, 35-Pin EASY2B, PCB Mount
- N° de stock RS:
- 838-6992
- Référence fabricant:
- FP35R12W2T4B11BOMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
47,54 €
(TVA exclue)
57,52 €
(TVA incluse)
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- Plus 6 unité(s) expédiée(s) à partir du 25 février 2026
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 47,54 € |
| 2 - 4 | 45,17 € |
| 5 - 9 | 43,26 € |
| 10 - 24 | 41,36 € |
| 25 + | 38,99 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 838-6992
- Référence fabricant:
- FP35R12W2T4B11BOMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 54 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 215 W | |
| Package Type | EASY2B | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 35 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 56.7 x 48 x 12mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 54 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 215 W | ||
Package Type EASY2B | ||
Configuration 3 Phase Bridge | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 35 | ||
Switching Speed 1MHz | ||
Transistor Configuration 3 Phase | ||
Dimensions 56.7 x 48 x 12mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
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