Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 162-3285
- Référence fabricant:
- IKQ75N120CT2XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
387,36 €
(TVA exclue)
468,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 12,912 € | 387,36 € |
| 60 - 60 | 12,267 € | 368,01 € |
| 90 + | 11,492 € | 344,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 162-3285
- Référence fabricant:
- IKQ75N120CT2XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 938 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.9 x 5.1 x 21.1mm | |
| Gate Capacitance | 4856pF | |
| Energy Rating | 10.8mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 938 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Transistor Configuration Single | ||
Dimensions 15.9 x 5.1 x 21.1mm | ||
Gate Capacitance 4856pF | ||
Energy Rating 10.8mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device
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