Name: Infineon, Type N-Channel IGBT Module, 300 A 1200 V, 7-Pin 62 mm Module, Clamp
Brand: Infineon
SKU: 124-8818
Price: 99.27 EUR
Availability: BackOrder

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Maximum Continuous Collector Current Ic	300A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	1600W
	Package Type	62 mm Module
	Mount Type	Clamp
	Channel Type	Type N
	Pin Count	7
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Operating Temperature	150°C
	Length	106.4mm
	Standards/Approvals	RoHS
	Series	62mmC
	Height	30.9mm
	Width	61.4 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Maximum Continuous Collector Current Ic 300A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 1600W
	Package Type 62 mm Module
	Mount Type Clamp
	Channel Type Type N
	Pin Count 7
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Operating Temperature 150°C
	Length 106.4mm
	Standards/Approvals RoHS
	Series 62mmC
	Height 30.9mm
	Width 61.4 mm
	Automotive Standard No

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACK^TM2/EconoPACK^TM3/EconoPACK^TM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon, Type N-Channel IGBT Module, 300 A 1200 V, 7-Pin 62 mm Module, Clamp

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IGBT Modules, Infineon

IGBT Discretes & Modules, Infineon

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