Infineon BSM200GA120DN2HOSA1, Type N-Channel IGBT Module, 300 A 1200 V, 5-Pin 62 mm Module, Clamp

Voir l’ensemble des IGBTs

Sous-total (1 plateau de 10 unités)*

1 981,10 €

(TVA exclue)

2 397,10 €

(TVA incluse)

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  • Expédition à partir du 15 février 2028
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Unité
Prix par unité
le plateau*
10 +198,11 €1 981,10 €

*Prix donné à titre indicatif

N° de stock RS:
170-2163
Référence fabricant:
BSM200GA120DN2HOSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

300A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1550W

Package Type

62 mm Module

Mount Type

Clamp

Channel Type

Type N

Pin Count

5

Switching Speed

800ns

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

3.7V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Height

36.5mm

Length

106.4mm

Standards/Approvals

DIN humidity Category F, IEC climatic Category 40 / 125 / 56

Width

61.4 mm

Automotive Standard

No

Pays d'origine :
SG

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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