Infineon FF150R12KS4HOSA1, Type N-Channel IGBT Module, 225 A 1200 V, 7-Pin 62 mm Module, Clamp
- N° de stock RS:
- 124-8787
- Référence fabricant:
- FF150R12KS4HOSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 boîte de 10 unités)*
928,68 €
(TVA exclue)
1 123,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 24 mai 2028
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | La Boite* |
|---|---|---|
| 10 - 10 | 92,868 € | 928,68 € |
| 20 + | 90,251 € | 902,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-8787
- Référence fabricant:
- FF150R12KS4HOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 225A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Package Type | 62 mm Module | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.85V | |
| Maximum Operating Temperature | 125°C | |
| Length | 106.4mm | |
| Standards/Approvals | No | |
| Height | 29mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 225A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1.25kW | ||
Package Type 62 mm Module | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 7 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.85V | ||
Maximum Operating Temperature 125°C | ||
Length 106.4mm | ||
Standards/Approvals No | ||
Height 29mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.