Infineon IGQ75N120S7XKSA1, Type N-Channel IGBT 1200 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-981
Référence fabricant:
IGQ75N120S7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

630W

Package Type

PG-TO-247-3-PLUS-N

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

15.9 mm

Height

5.1mm

Length

20.1mm

Standards/Approvals

IEC 60749, IEC 60068, IEC 60747

Automotive Standard

No

The Infineon IGBT is designed to operate efficiently at 1200 V while ensuring robust performance in demanding applications. Featuring cutting edge trench technology, this device excels in handling high current levels of up to 75 A, making it Ideal for industrial power supplies and renewable energy systems such as solar inverters. The meticulous design ensures low saturation voltage and significant dv/dt controllability, enhancing the reliability and efficiency of power conversion systems. With a strong emphasis on durability, this IGBT is validated for industrial applications according to stringent JEDEC standards, ensuring it meets the rigorous demands of modern electronics.

Designed with trench technology for efficiency

Short circuit ruggedness ensures reliable performance

Wide temperature range for diverse applications

Reduced switching losses enhance thermal management

Optimized for high performance industrial use

Comprehensive PSpice models for easy integration

Low gate charge enables Faster switching speeds

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