Infineon IGQ120N120S7XKSA1, Type N-Channel IGBT, 216 A 1200 V, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
Options de conditionnement :
N° de stock RS:
284-978
Référence fabricant:
IGQ120N120S7XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

216A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1kW

Package Type

PG-TO-247-3-PLUS-N

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Width

15.9 mm

Length

20.1mm

Height

5.1mm

Standards/Approvals

IEC 60068, IEC 60749, IEC 60747

Automotive Standard

No

The Infineon IGBT is a cutting edge power semiconductor designed for high performance applications. With its Advanced trench technology, this IGBT delivers exceptional ruggedness and reliability. Capable of withstanding short circuits for up to 8 microseconds, it is engineered for demanding environments such as industrial power supplies and renewable energy systems. The device operates at a collector emitter voltage of up to 1200 V and supports continuous collector currents of 120 A. Enhanced thermal performance is achieved through low thermal resistance, making it a favourite among engineers seeking efficiency and performance in their designs.

Optimized for high thermal dissipation

Handles brief short circuits reliably

Wide dv/dt controllability for flexibility

Conforms to industrial standards for robustness

Delivers low saturation voltage for efficiency

Offers a spectrum of models for applications

Liens connexes

Recently viewed