Infineon IGQ75N120S7XKSA1, N-Channel IGBT 1.2 kV, 3-Pin PG-TO-247-3-PLUS-N, Through Hole
- N° de stock RS:
- 284-979
- Référence fabricant:
- IGQ75N120S7XKSA1
- Fabricant:
- Infineon
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 284-979
- Référence fabricant:
- IGQ75N120S7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage (Vceo) | 1.2 kV | |
| Pin Count | 3 | |
| Package Type | PG-TO-247-3-PLUS-N | |
| Mount Type | Through Hole | |
| Automotive Standard | No | |
| Height | 5.1 mm | |
| Length | 20.1 mm | |
| Maximum Gate Emitter Voltage (VGEO) | ±20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 630 W | |
| Minimum Operating Temperature | -40 °C | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Width | 15.9 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage (Vceo) 1.2 kV | ||
Pin Count 3 | ||
Package Type PG-TO-247-3-PLUS-N | ||
Mount Type Through Hole | ||
Automotive Standard No | ||
Height 5.1 mm | ||
Length 20.1 mm | ||
Maximum Gate Emitter Voltage (VGEO) ±20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 630 W | ||
Minimum Operating Temperature -40 °C | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Width 15.9 mm | ||
The Infineon IGBT is designed to operate efficiently at 1200 V while ensuring robust performance in demanding applications. Featuring cutting edge trench technology, this device excels in handling high current levels of up to 75 A, making it Ideal for industrial power supplies and renewable energy systems such as solar inverters. The meticulous design ensures low saturation voltage and significant dv/dt controllability, enhancing the reliability and efficiency of power conversion systems. With a strong emphasis on durability, this IGBT is validated for industrial applications according to stringent JEDEC standards, ensuring it meets the rigorous demands of modern electronics.
Designed with trench technology for efficiency
Short circuit ruggedness ensures reliable performance
Wide temperature range for diverse applications
Reduced switching losses enhance thermal management
Optimized for high performance industrial use
Comprehensive PSpice models for easy integration
Low gate charge enables Faster switching speeds
Liens connexes
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