onsemi FGY4L100T120SWD, Type N-Channel Common Emitter IGBT, 200 A 1200 V, 4-Pin TO-247-4L, Through Hole
- N° de stock RS:
- 277-076
- Référence fabricant:
- FGY4L100T120SWD
- Fabricant:
- onsemi
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Sous-total (1 unité)*
10,15 €
(TVA exclue)
12,28 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 10,15 € |
| 10 - 99 | 9,14 € |
| 100 - 499 | 8,44 € |
| 500 - 999 | 7,82 € |
| 1000 + | 7,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-076
- Référence fabricant:
- FGY4L100T120SWD
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current Ic | 200A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Number of Transistors | 1 | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5 mm | |
| Length | 15.8mm | |
| Height | 22.54mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current Ic 200A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1.07kW | ||
Number of Transistors 1 | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 5 mm | ||
Length 15.8mm | ||
Height 22.54mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
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