Renesas Electronics HIP2210FRTZ-T7A, Half Bridge 2, 4 A 10-Pin 18 V, TDFN

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Sous-total (1 paquet de 3 unités)*

5,499 €

(TVA exclue)

6,654 €

(TVA incluse)

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Dernier stock RS
  • 48 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le paquet*
3 - 271,833 €5,50 €
30 - 721,65 €4,95 €
75 - 2971,557 €4,67 €
300 +1,337 €4,01 €

*Prix donné à titre indicatif

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N° de stock RS:
250-6591
Référence fabricant:
HIP2210FRTZ-T7A
Fabricant:
Renesas Electronics
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Marque

Renesas Electronics

Product Type

Gate Driver Module

Output Current

4A

Pin Count

10

Package Type

TDFN

Fall Time

365ns

Number of Outputs

2

Driver Type

Half Bridge

Rise Time

435ns

Minimum Supply Voltage

6V

Number of Drivers

2

Maximum Supply Voltage

18V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

3 mm

Length

3.80mm

Series

HIP2210

Standards/Approvals

No

Height

0.75mm

Mount Type

Surface

Automotive Standard

No

The Renesas 100 V, 3 A source, 4 A sink high-frequency half-bridge NMOS FET driver belongs to HIP2210 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6 V to 18 V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

115 VDC bootstrap supply maximum voltage supports 100 V on the half-bridge

Fast propagation delay and matching : 15ns typical delay, 2 ns typical matching (HIP2211)

Integrated 0.5 Ω typical bootstrap diode

Wide 6 V to 18 V operating voltage range

VDD and boot Undervoltage Lockout (UVLO)

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