Renesas Electronics HIP2100IBZT7A, Half Bridge 2, 2 A 8-Pin 14 V dc, SOIC

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Sous-total (1 paquet de 2 unités)*

8,51 €

(TVA exclue)

10,298 €

(TVA incluse)

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Dernier stock RS
  • 244 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le paquet*
2 - 84,255 €8,51 €
10 - 183,825 €7,65 €
20 - 983,74 €7,48 €
100 - 1983,125 €6,25 €
200 +3,06 €6,12 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
256-1548
Référence fabricant:
HIP2100IBZT7A
Fabricant:
Renesas Electronics
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Marque

Renesas Electronics

Product Type

Gate Driver Module

Output Current

2A

Pin Count

8

Package Type

SOIC

Fall Time

10ns

Driver Type

Half Bridge

Number of Outputs

2

Rise Time

10ns

Minimum Supply Voltage

9V

Number of Drivers

2

Maximum Supply Voltage

14V dc

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

5mm

Height

1.75mm

Width

4 mm

Series

HIP2100

Mount Type

Board

Automotive Standard

No

The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.

Drives N-channel MOSFET half bridge

Pb-free (RoHS compliant)

Bootstrap supply max voltage to 114VDC

On-chip 1Ω bootstrap diode

Fast propagation times for multi-MHz circuits

Drives 1000pF load with rise and fall times typ of 10ns

CMOS input thresholds for improved noise immunity

Low Power Consumption

Wide Supply Range

Supply Under voltage Protection


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