Renesas Electronics 3A Source, 4A Sink, 100V, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and
- N° de stock RS:
- 249-8414
- Référence fabricant:
- HIP2211EVAL2Z
- Fabricant:
- Renesas Electronics
Offre groupée disponible
Sous-total (1 unité)*
64,25 €
(TVA exclue)
77,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 4 | 64,25 € |
| 5 - 9 | 62,58 € |
| 10 + | 61,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-8414
- Référence fabricant:
- HIP2211EVAL2Z
- Fabricant:
- Renesas Electronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Power Management Function | Half-Bridge Driver | |
| For Use With | ISL2111 | |
| Kit Classification | Evaluation Board | |
| Kit Name | 3A Source, 4A Sink, 100V, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and Adjustable Dead Time | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Power Management Function Half-Bridge Driver | ||
For Use With ISL2111 | ||
Kit Classification Evaluation Board | ||
Kit Name 3A Source, 4A Sink, 100V, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and Adjustable Dead Time | ||
The Renesas Electronics boards are designed to provide a quick and comprehensive method for evaluating the HIP2211 100V, high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation boards to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator. The HIP2211 half-bridge driver is offered in an 8 Ld SOIC, 8 Ld DFN or 10 Ld DFN package (with enhanced thermal EPAD). This evaluation board is designed for the 10 Ld DFN package. The 8 Ld DFN package can fit on this board as well. Both boards operate from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and the low-side MOSFETs in a 100V half-bridge configuration.
3A source and 4A sink NMOS gate drivers
Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100V high-side bootstrap reference
6V to 18V bias supply operation
Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation
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