Renesas Electronics HIP2210FRTZ MOSFET Gate Driver, 1.69 mA 10-Pin 100 V, SOIC
- N° de stock RS:
- 264-3549
- Référence fabricant:
- HIP2210FRTZ
- Fabricant:
- Renesas Electronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 750 unités)*
1 032,75 €
(TVA exclue)
1 249,50 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 750 - 2250 | 1,377 € | 1 032,75 € |
| 3000 + | 1,338 € | 1 003,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-3549
- Référence fabricant:
- HIP2210FRTZ
- Fabricant:
- Renesas Electronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 1.69mA | |
| Pin Count | 10 | |
| Package Type | SOIC | |
| Fall Time | 790ns | |
| Driver Type | MOSFET | |
| Rise Time | 20ns | |
| Minimum Supply Voltage | 100V | |
| Maximum Supply Voltage | 100V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | HIP2210 | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 1.69mA | ||
Pin Count 10 | ||
Package Type SOIC | ||
Fall Time 790ns | ||
Driver Type MOSFET | ||
Rise Time 20ns | ||
Minimum Supply Voltage 100V | ||
Maximum Supply Voltage 100V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series HIP2210 | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.75mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Renesas Electronics high-frequency half-bridge NMOS FET drivers. This is a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to
18V and integrated high-side bootstrap diodecsupports driving the high-side and low-side NMOS in 100V half-bridge applications.
Integrated 0.5Ω typical bootstrap diode
Robust noise tolerance
VDD and boot undervoltage lockout
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