Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN

Offre groupée disponible

Sous-total (1 tube de 81 unités)*

140,94 €

(TVA exclue)

170,91 €

(TVA incluse)

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Temporairement en rupture de stock
  • Expédition à partir du 08 juillet 2026
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Unité
Prix par unité
le tube*
81 - 811,74 €140,94 €
162 - 2431,613 €130,65 €
324 - 4861,571 €127,25 €
567 +1,533 €124,17 €

*Prix donné à titre indicatif

N° de stock RS:
188-5399
Référence fabricant:
FM24CL16B-DG
Fabricant:
Infineon
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Marque

Infineon

Product Type

FRAM

Memory Size

16kB

Organisation

2K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

3000ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

DFN

Pin Count

8

Length

4.5mm

Height

0.75mm

Standards/Approvals

No

Width

4 mm

Maximum Operating Temperature

85°C

Number of Words

2k

Minimum Supply Voltage

2.7V

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Maximum Supply Voltage

3.65V

Automotive Standard

AEC-Q100

Pays d'origine :
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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