Infineon 16 kB 2 Wire I2C FRAM 8-Pin DFN, FM24CL16B-DG
- N° de stock RS:
- 125-4211
- Référence fabricant:
- FM24CL16B-DG
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
10,53 €
(TVA exclue)
12,74 €
(TVA incluse)
Ajouter 40 unités pour bénéficier d'une livraison gratuite
En stock
- 25 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 2,106 € | 10,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 125-4211
- Référence fabricant:
- FM24CL16B-DG
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | FRAM | |
| Memory Size | 16kB | |
| Organisation | 2K x 8 bit | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Width | 4 mm | |
| Length | 4.5mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.65V | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 2k | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type FRAM | ||
Memory Size 16kB | ||
Organisation 2K x 8 bit | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type DFN | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Width 4 mm | ||
Length 4.5mm | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.65V | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 2k | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Liens connexes
- Infineon 16kbit I2C FRAM Memory 8-Pin DFN, FM24CL16B-DG
- Infineon 16kbit Serial-2 Wire FM24CL16B-G
- Infineon 16kbit I2C FRAM Memory 8-Pin SOIC, FM24CL16B-G
- Infineon 16kbit I2C FRAM Memory 8-Pin SOIC, FM24CL16B-GTR
- Infineon 16kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24C16B-GTR
- Infineon 16kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24C16B-G
- Infineon 64kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL64B-DG
- Infineon 256kbit SPI FRAM Memory 8-Pin DFN, FM25V02A-DG
