Infineon 256 kB SPI FRAM 8-Pin DFN, FM25V02A-DG

Offre groupée disponible

Sous-total (1 paquet de 2 unités)*

11,81 €

(TVA exclue)

14,29 €

(TVA incluse)

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Temporairement en rupture de stock
  • Expédition à partir du 05 juin 2026
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Unité
Prix par unité
le paquet*
2 - 85,905 €11,81 €
10 - 184,55 €9,10 €
20 - 984,43 €8,86 €
100 - 4984,315 €8,63 €
500 +4,21 €8,42 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
124-2986
Référence fabricant:
FM25V02A-DG
Fabricant:
Infineon
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Marque

Infineon

Memory Size

256kB

Product Type

FRAM

Organisation

32K x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

DFN

Pin Count

8

Height

0.75mm

Width

4 mm

Length

4.5mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Automotive Standard

AEC-Q100

Number of Words

32k

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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