onsemi MJD210RLG Transistor, -5 A PNP, -25 V, 4-Pin DPAK
- N° de stock RS:
- 790-5325
- Référence fabricant:
- MJD210RLG
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 10 unités)*
5,71 €
(TVA exclue)
6,91 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 350 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 10 - 90 | 0,571 € | 5,71 € |
| 100 - 490 | 0,403 € | 4,03 € |
| 500 - 990 | 0,33 € | 3,30 € |
| 1000 - 2490 | 0,268 € | 2,68 € |
| 2500 + | 0,228 € | 2,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 790-5325
- Référence fabricant:
- MJD210RLG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -5A | |
| Maximum Collector Emitter Voltage Vceo | -25V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 40V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Maximum Emitter Base Voltage VEBO | 8V | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 12.5W | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | MJD210 | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -5A | ||
Maximum Collector Emitter Voltage Vceo -25V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 40V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Maximum Emitter Base Voltage VEBO 8V | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 12.5W | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series MJD210 | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device
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