Bourns 1-Element Bi-Directional TVS Diode, 2-Pin DFN
- N° de stock RS:
- 209-8050
- Référence fabricant:
- TBU-CA085-500-WH-Q
- Fabricant:
- Bourns
Sous-total (1 bobine de 3000 unités)*
2 640,00 €
(TVA exclue)
3 180,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,88 € | 2 640,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 209-8050
- Référence fabricant:
- TBU-CA085-500-WH-Q
- Fabricant:
- Bourns
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Bourns | |
| Diode Configuration | Single | |
| Product Type | TVS Diode | |
| Direction Type | Bi-Directional | |
| Mount Type | Surface | |
| Package Type | DFN | |
| Pin Count | 2 | |
| ESD Protection | Yes | |
| Clamping Voltage VC | 425V | |
| Minimum Operating Temperature | -55°C | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | 125°C | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Length | 6.5mm | |
| Height | 1.05mm | |
| Series | TBU | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Bourns | ||
Diode Configuration Single | ||
Product Type TVS Diode | ||
Direction Type Bi-Directional | ||
Mount Type Surface | ||
Package Type DFN | ||
Pin Count 2 | ||
ESD Protection Yes | ||
Clamping Voltage VC 425V | ||
Minimum Operating Temperature -55°C | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature 125°C | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Length 6.5mm | ||
Height 1.05mm | ||
Series TBU | ||
Automotive Standard AEC-Q101 | ||
The Bourns TBU-CA085-500-WH-Q product is low capacitance single bidirectional high-speed protection components, constructed using MOSFET semiconductor technology, and designed to protect against faults caused by shortcircuits, AC power cross, induction and lightning surges. Peak impulse voltage withstand with duration less than 10 ms is 850 v.
Superior circuit protection.
Overcurrent and overvoltage protection.
Blocks surges up to rated limits.
High-speed performance.
Small SMT package.
Liens connexes
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