Bourns TBU-CA025-050-WH-Q 1-Element Bi-Directional TVS Diode, 2-Pin DFN
- N° de stock RS:
- 209-8045
- Référence fabricant:
- TBU-CA025-050-WH-Q
- Fabricant:
- Bourns
Sous-total (1 paquet de 5 unités)*
7,30 €
(TVA exclue)
8,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 140 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,46 € | 7,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 209-8045
- Référence fabricant:
- TBU-CA025-050-WH-Q
- Fabricant:
- Bourns
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Bourns | |
| Direction Type | Bi-Directional | |
| Diode Configuration | Single | |
| Product Type | TVS Diode | |
| Minimum Breakdown Voltage Vbr | 7.5V | |
| Mount Type | Surface | |
| Package Type | DFN | |
| Pin Count | 2 | |
| Clamping Voltage VC | 250V | |
| ESD Protection | Yes | |
| Minimum Operating Temperature | -55°C | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | 125°C | |
| Series | TBU | |
| Height | 1.05mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Bourns | ||
Direction Type Bi-Directional | ||
Diode Configuration Single | ||
Product Type TVS Diode | ||
Minimum Breakdown Voltage Vbr 7.5V | ||
Mount Type Surface | ||
Package Type DFN | ||
Pin Count 2 | ||
Clamping Voltage VC 250V | ||
ESD Protection Yes | ||
Minimum Operating Temperature -55°C | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature 125°C | ||
Series TBU | ||
Height 1.05mm | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
The Bourns TBU-CA025-050-WH-Q product is low capacitance single bidirectional high-speed protection components, constructed using MOSFET semiconductor technology, and designed to protect against faults caused by shortcircuits, AC power cross, induction and lightning surges. Peak impulse voltage withstand with duration less than 10 ms is 250 v.
Superior circuit protection.
Overcurrent and overvoltage protection.
Blocks surges up to rated limits.
High-speed performance.
Small SMT package.
Liens connexes
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