Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220 QH12TZ600Q
- N° de stock RS:
- 231-8074
- Référence fabricant:
- QH12TZ600Q
- Fabricant:
- Power Integrations
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 231-8074
- Référence fabricant:
- QH12TZ600Q
- Fabricant:
- Power Integrations
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Power Integrations | |
| Maximum Forward Current If | 12A | |
| Product Type | SiC Schottky | |
| Diode Configuration | Single | |
| Mount Type | Through Hole | |
| Sub Type | SiC Schottky | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Maximum Forward Voltage Vf | 3.1V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 61mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 30.73mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Power Integrations | ||
Maximum Forward Current If 12A | ||
Product Type SiC Schottky | ||
Diode Configuration Single | ||
Mount Type Through Hole | ||
Sub Type SiC Schottky | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Maximum Forward Voltage Vf 3.1V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 61mW | ||
Maximum Operating Temperature 150°C | ||
Height 30.73mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger
Liens connexes
- Power Integrations SiC Schottky 12 A, 2-Pin 600 V TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK IDD06SG60CXTMA2
- STMicroelectronics 650 V 6 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC6G065D
- STMicroelectronics 650 V 4 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC4G065D
- STMicroelectronics 650 V 20 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC20G065DY
