Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- N° de stock RS:
- 216-8385
- Référence fabricant:
- IDH12G65C5XKSA2
- Fabricant:
- Infineon
Sous-total (1 tube de 50 unités)*
165,60 €
(TVA exclue)
200,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 550 unité(s) expédiée(s) à partir du 29 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 3,312 € | 165,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-8385
- Référence fabricant:
- IDH12G65C5XKSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | SiC Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 190μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 97A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 29.95mm | |
| Standards/Approvals | JEDEC1) | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type SiC Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 190μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 97A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 29.95mm | ||
Standards/Approvals JEDEC1) | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 6 offers a new leading edge technology for the schottky barrier diode with current rating of 12 A. This latest generation is suitable for use in telecom SMPS and high-end servers, UPS systems, motor drives, solar inverters as well as PC silver box and lighting applications.
Best-in-class figure of merit
No reverse recovery charge
Temperature independent switching behaviour
High dv/dt ruggedness
Optimized thermal behaviour
Liens connexes
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- STMicroelectronics 650 V 6 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC6G065D
- STMicroelectronics 650 V 4 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC4G065D
- STMicroelectronics 650 V 20 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC20G065DY