onsemi 650 V 10.1 A Diode Schottky 3-Pin D2PAK

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N° de stock RS:
194-5744
Référence fabricant:
FFSB0865B
Fabricant:
onsemi
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Marque

onsemi

Product Type

Diode

Mount Type

Surface

Package Type

TO-263

Maximum Continuous Forward Current If

10.1A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

3

Maximum Forward Voltage Vf

2.4V

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

160μA

Peak Non-Repetitive Forward Surge Current Ifsm

577A

Maximum Operating Temperature

175°C

Height

9.65mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

High UIS, Surge Current, and Avalanche

High Junction Temperature

Low Vf

No Qrr

49mJ @ 25C

Tj = 175C

1.41V

< 100nC

Applications

PFC

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