onsemi 650 V 8 A Schottky Diode Schottky 2-Pin D2PAK

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Sous-total (1 bobine de 800 unités)*

1 236,00 €

(TVA exclue)

1 495,20 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
800 +1,545 €1 236,00 €

*Prix donné à titre indicatif

N° de stock RS:
195-8853
Référence fabricant:
FFSB0665B-F085
Fabricant:
onsemi
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Marque

onsemi

Mount Type

Surface

Product Type

Schottky Diode

Package Type

TO-263

Maximum Continuous Forward Current If

8A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

EliteSiC

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Maximum Forward Voltage Vf

2.4V

Peak Reverse Current Ir

160μA

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

45A

Maximum Operating Temperature

175°C

Height

8.69mm

Standards/Approvals

Pb-Free, RoHS

Length

10.16mm

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, D2PAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

PPAP Capable

Applications

Automotive HEV-EV Onboard Chargers

Automotive HEV-EV DC-DC Converters

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