onsemi 650 V 73 A Schottky Diode Schottky 3-Pin D2PAK

Voir la catégorie
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
185-7993
Référence fabricant:
FFSB3065B-F085
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Mount Type

Surface

Product Type

Schottky Diode

Package Type

TO-263

Maximum Continuous Forward Current If

73A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Series

EliteSiC

Rectifier Type

Schottky

Pin Count

3

Peak Non-Repetitive Forward Surge Current Ifsm

120A

Peak Reverse Current Ir

120μA

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

2.4V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free, RoHS

Length

10.67mm

Width

9.65 mm

Height

4.58mm

Automotive Standard

AEC-Q101

Non conforme

Pays d'origine :
CN

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, D2PAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175°C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

PPAP Capable

Applications

Automotive HEV−EV Onboard Chargers

Automotive HEV−EV DC−DC Converters

Liens connexes