onsemi 1200 V 17 A Diode Schottky 2-Pin TO-247 FFSH10120A-F085
- N° de stock RS:
- 178-4429
- Référence fabricant:
- FFSH10120A-F085
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
8,65 €
(TVA exclue)
10,47 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,65 € |
| 10 + | 7,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-4429
- Référence fabricant:
- FFSH10120A-F085
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 17A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Diameter | 6.85 mm | |
| Width | 4.82 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 17A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 400μA | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Diameter 6.85 mm | ||
Width 4.82 mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
No Reverse Recovery / No Forward Recovery
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
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