STMicroelectronics 1.2 kV 10 A Diode Schottky 3-Pin D2PAK STPSC10H12GY-TR
- N° de stock RS:
- 163-7347
- Référence fabricant:
- STPSC10H12GY-TR
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 163-7347
- Référence fabricant:
- STPSC10H12GY-TR
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Peak Reverse Repetitive Voltage (Vrrm) | 1.2 kV | |
| Maximum Continuous Forward Current (If) | 10 A | |
| Product Type | Diode | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Package Type | TO-263 | |
| Automotive Standard | AEC-Q101, AEC-Q101 | |
| Diode Configuration | Single | |
| Height | 4.6 mm | |
| Length | 10.4 mm | |
| Maximum Forward Voltage (Vf) | 2.25 V | |
| Maximum Operating Temperature | 175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Mount Type | Surface | |
| Peak Non-Repetitive Forward Surge Current (Ifsm) | 420 A | |
| Peak Reverse Current (Ir) | 400 μA | |
| Standards/Approvals | No | |
| Width | 9.35 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Peak Reverse Repetitive Voltage (Vrrm) 1.2 kV | ||
Maximum Continuous Forward Current (If) 10 A | ||
Product Type Diode | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Package Type TO-263 | ||
Automotive Standard AEC-Q101, AEC-Q101 | ||
Diode Configuration Single | ||
Height 4.6 mm | ||
Length 10.4 mm | ||
Maximum Forward Voltage (Vf) 2.25 V | ||
Maximum Operating Temperature 175 °C | ||
Minimum Operating Temperature -40 °C | ||
Mount Type Surface | ||
Peak Non-Repetitive Forward Surge Current (Ifsm) 420 A | ||
Peak Reverse Current (Ir) 400 μA | ||
Standards/Approvals No | ||
Width 9.35 mm | ||
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
PPAP capable
Operating Temp. from -40 °C to 175 °C
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