STMicroelectronics 1200V 10A, SiC Schottky Diode, 2 + Tab-Pin D2PAK STPSC10H12GY-TR

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N° de stock RS:
163-7347
Référence fabricant:
STPSC10H12GY-TR
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Mounting Type

Surface Mount

Package Type

D2PAK

Maximum Continuous Forward Current

10A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.25V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

71 A, 420 A

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases

No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
PPAP capable
Operating Temp. from -40 °C to 175 °C

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